2SK3391 silicon n channel mos fet uhf power amplifier ade-208-847 (z) 1st. edition aug. 2001 features ? high power output, high gain, high efficiency pg = 18 db, pout = 1.6 w, add= 58 % min. (f = 836 mhz) ? compact package capable of surface mounting outline upak d g s 1 2,4 3 3 1. gate 2. source 3. drain 4. source 2 1 4 note: marking is ?jx?. this device is sensitive to electro static discharge. an adequate handling procedure is requested.
2SK3391 rev.0, aug. 2001, page 2 of 7 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 17 v gate to source voltage v gss 10 v drain current i d 0.3 a drain peak current i d(pulse) note1 0.75 a channel dissipation pch note2 5w channel temperature tch 150 c storage temperature tstg ?45 to +150 c note: 1. pw < 1sec, tch < 150 c 2. value at tc = 25c, use the ideal heat sink. electrical characteristics (tc = 25c) item symbol min typ max unit test conditions zero gate voltage drain current i dss ??10 av ds = 13.7 v, v gs = 0 gate to source leak current i gss ??5 av gs = 10 v, v ds = 0 gate to source cutoff voltage v gs(off) 2.3 ? 3.1 v i d = 1 ma, v ds = 13.7 v input capacitance ciss ? 10 ? pf v gs = 5v, v ds = 0, f = 1 mhz output capacitance coss ? 3.5 ? pf v ds = 13.7 v, v gs = 0, f = 1 mhz output power pout 1.6 ? ? w v ds = 13.7 v, i do = 0.15 a f = 836 mhz, pin = 25.1 mw added efficiency add 58 ? ? % v ds = 13.7v, i do = 0.15a f = 836 mhz, pin = 25.1 mw
2SK3391 rev.0, aug. 2001, page 3 of 7 main characteristics 8 6 4 2 0 50 100 150 200 channel power dissipation pch (w) case temperature tc ( c) maximum channel power dissipation curve 0.8 2 34567 gate to source voltage v (v) drain current i (a) typical transfer characteristics d v = 13.7 v ds pulse test gs 1.5 0 2 46810 typical output characteristics v = 4 v gs 6 v 5 v pulse test 8 v 10 v drain to source voltage v (v) ds drain current i (a) d 7 v 0.01 1 0.3 0.03 0.1 0.03 0.1 0.3 1 0.01 drain current i (a) d forward transfer admittance |y | (s) fs forward transfer admittance vs. drain current v = 13.7 v pulse test ds tc = - 25 c 25 c 75 c tc = 75 c 25 c - 25 c 1 0.5 0.6 0.4 0.2 0.0 0.001 0.003 0.001 0.003
2SK3391 rev.0, aug. 2001, page 4 of 7 0.1 0.03 0.3 drain to source saturatioin voltage vs. drain current input capacitance vs. gate to source voltage 9 8.5 -10 - 6 - 2 2 610 v = 0 f = 1 mhz ds 9.5 10 10.5 gs v = 10 v pulse test 1 0.01 0.03 0.1 0.3 1 v (v) ds(sat) drain to source saturation voltage d drain current i (a) input capacitance ciss (pf) gs gate to source voltage v (v) 0.01 0.001 0.003 3.6 3.2 2.8 2.4 2.0 1.6 - 25 ambient temperature ta ( c) gate to source cutoff voltage gate to source cutoff voltage vs. ambient temperature gs(off) 0 25 50 75 100 125 v = 13.7 v ds 10 ma v (v) i d = 0.1 ma 1 ma 75 c 25 c tc = - 25 c output capacitance vs. drain to source voltage 1 3 10 30 1 10 100 30 3 output capacitance coss (pf) ds drain to source voltage v (v) 0.1 0.3 v = 0 f = 1 mhz gs
2SK3391 rev.0, aug. 2001, page 5 of 7 1 3 10 30 1 0.3 10 0.1 3 reverse transfer capacitance vs. drain to gate votage drain to gate voltege v (v) reverse transfer capacitance crss (pf) dg 0.1 0.3 v = 0 f = 1 mhz gs 040 30 20 10 v = 13.7 v i = 0.15 a f = 836 mhz ds do 2.5 2 1 0.5 0 0 100 60 40 20 added efficiency add (%) input power pin (mw) output power, added efficiency vs. input power output power pout (w) pout 1.5 80 50 add
2SK3391 rev.0, aug. 2001, page 6 of 7 package dimensions 4.5 0.1 1.8 max 1.5 0.1 0.44 max 0.44 max 0.48 max 0.53 max 1.5 1.5 3.0 2.5 0.1 4.25 max 0.8 min 1 0.4 (1.5) (2.5) (0.4) (0.2) hitachi code jedec eiaj mass (reference value) upak ? conforms 0.050 g as of january, 2001 unit: mm
2SK3391 rev.0, aug. 2001, page 7 of 7 disclaimer 1. hitachi neither warrants nor grants licenses of any rights of hitachi?s or any third party?s patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party?s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi?s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi?s sales office for any questions regarding this document or hitachi semiconductor products. sales offices hitachi, ltd. semiconductor & integrated circuits nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2001. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00 singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://semiconductor.hitachi.com.sg url http://www.hitachisemiconductor.com/ hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road hung-kuo building taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://semiconductor.hitachi.com.hk hitachi europe gmbh electronic components group dornacher stra?e 3 d-85622 feldkirchen postfach 201, d-85619 feldkirchen germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi europe ltd. electronic components group whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585200 hitachi semiconductor (america) inc. 179 east tasman drive san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 5.0
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